High precision determination of the elastic strain of InGaN/GaN multiple quantum wells

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 3, 2004, Pages 920-924

  Wu, M F ^a,b   Zhou, Shengqiang ^a,b   Yao, Shude ^a,b   Zhao, Qiang ^b   Vantomme, A ^b   Van Daele, B ^c   Piscopiello, E ^c   Van Tendeloo, G ^c   Tong, Y Z ^a   Yang, Z J ^a   Yu, T J ^a   Zhang, G Y ^a  

^a PEKING UNIVERSITY   (China)

^b KU LEUVEN   (Belgium)

^c UNIVERSITY OF ANTWERP   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; DEFECTS; EPITAXIAL GROWTH; GALLIUM NITRIDE; LATTICE CONSTANTS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

COMPRESSIVE STRAINS; ELASTIC CONSTANTS; ELASTIC STRAINS; STRAIN RELAXATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 3242732308     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1715085     Document Type: Article

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