Reduction of ohmic contact on p-GaN with surface treatment using Cl 2 inductively coupled plasma

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 3, 2004, Pages 971-973

  Su, S H ^a   Tseng, C T ^a   Hau, C C ^a   Yokoyama, M ^a   Chen, S M ^b  

^a I SHOU UNIVERSITY   (Taiwan)

^b Epitech Technology Corporation   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHLORINE; FERMI LEVEL; GALLIUM; HEAT CONDUCTION; INDUCTIVELY COUPLED PLASMA; LIGHT EMITTING DIODES; REDUCTION; SPECTRUM ANALYSIS; SURFACE TREATMENT; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC RATIO; ELECTRON-BEAM EVAPORATORS; HALL MEASUREMENTS; OHMIC CONTACT;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 3242718808     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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