Physical and electrical analysis of silicon dioxide thin films produced by electron-cyclotron resonance chemical-vapour deposition

Microelectronic Engineering

Volumn 36, Issue 1-4, 1997, Pages 53-60

  Landheer, D ^a   Ragnarsson, L A ^b   Belkouch, S ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON CYCLOTRON RESONANCE CHEMICAL VAPOR DEPOSITION; POLYSILICON GATE PROCESSING;

ANNEALING; CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; ELECTRON TUNNELING; ELECTRONIC DENSITY OF STATES; INTERFACES (MATERIALS); ION IMPLANTATION; MOSFET DEVICES; SILICA; SURFACE ROUGHNESS; THICK FILMS; THIN FILMS; ATOMIC FORCE MICROSCOPY; CAPACITORS; ELECTRON CYCLOTRON RESONANCE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GATES (TRANSISTOR); PLASMA APPLICATIONS;

DIELECTRIC FILMS; SEMICONDUCTING FILMS;

CAPACITANCE VOLTAGE (CV) METHOD; POLYSILICON GATES;

EID: 0031150219     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00014-2     Document Type: Article

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