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Volumn 3, Issue 2, 2003, Pages 119-124

Evaluations and considerations for self-assembled monolayer field-effect transistors

Author keywords

[No Author keywords available]

Indexed keywords

ARTICLE; ELECTRICITY; EQUIPMENT DESIGN; EVALUATION; MEASUREMENT; PHYSICAL CHEMISTRY; REPRODUCIBILITY; SEMICONDUCTOR; THICKNESS;

EID: 0012272966     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl0259075     Document Type: Article
Times cited : (112)

References (41)
  • 16
    • 0141435387 scopus 로고    scopus 로고
    • note
    • 2 and HBr was used to etch ∼660 nm trenches into the silicon wafer. The combination of gases was optimized to give 90° sidewalls, and the etch depth and angle were confirmed by SEM. The wafers were cleaned in an ozone-modified Huang clean and a 6 nm sacrificial oxide was grown and then removed by a modified Huang clean to reduce RIE damage and achieve smooth trench bottoms to ∼1 nm as confirmed by AFM measurements with a nanotube tip and SEM. A 30 nm oxide was grown to form the gate dielectric of the device structure.
  • 17
    • 0141658408 scopus 로고    scopus 로고
    • note
    • Efforts to etch vertical sidewalls in (100) n+ Si wafers were unsuccessful as the gas chemistries in n+ Si are not sufficiently selective and lateral etching occurs.
  • 18
    • 0141435389 scopus 로고    scopus 로고
    • note
    • 2 hard mask, and the KOH solution etches into the Si wafer. The substrates were cleaned in water and dilute HCl. A 30 nm oxide was targeted, as used for the RIE trench above, to form the gate dielectric of the device structure. Since n+ silicon wafers oxidize more readily, the oxide thickness, using the same conditions as in (100) wafers, is ∼44 nm.
  • 20
    • 4243897311 scopus 로고    scopus 로고
    • Public presentations
    • Schön, J. H., public presentations.
    • Schön, J.H.1
  • 24
    • 0141770358 scopus 로고    scopus 로고
    • note
    • Contact angle measurements are reliable for hydrophilic surfaces, where 0θ∼20-30°, and for hydrophobic surfaces, where θ∼105-115°. Measurements of molecules that would have contact angles in between are hard to distinguish from organic contamination which may increase the contact angle of an otherwise hydrophilic surface, such as Au, from ∼25° to ∼85°. Ellipsometry measurements on monolayers are also difficult to rely on. It is usually not possible to create an appropriate reference surface free from environmental contamination. In addition, to fully understand ellipsometric measurements for the small molecular lengths considered in many systems of interest, first-principle calculations of the optical response functions of both the clean surface and of the suitably modeled adsorbate covered surface appear to be necessary.
  • 28
    • 0141770359 scopus 로고    scopus 로고
    • note
    • 2 box for each experiment. Solutions were filtered through a 0.2 μm PTFE syringe filter into a clean, dry, glass jar. The substrate was immersed in the solution for 24 h (other times were also tried). Upon removal the sample was immersed in clean ethanol, without allowing the sample to dry, and rinsed well.
  • 38
    • 0141435386 scopus 로고    scopus 로고
    • See issue on Alternative Gate Dielectrics for Microelectronics. Eds. Wallace, R. M., Wilk, G.; MRS Bulletin 2001, 23.
    • (2001) MRS Bulletin , pp. 23
    • Wallace, R.M.1    Wilk, G.2
  • 39
    • 0141658406 scopus 로고    scopus 로고
    • note
    • Surfaces, whether metals or oxides that typically form the electrodes and dielectric layers of devices, become contaminated in the environment with inorganic and organic species. While quick exchange between vacuum and molecular solutions used for assembly may be suitable for device test structures fabricated from relatively nonreactive electrodes (such as Au, Pd, Pt) and oxide dielectrics, more reactive metals (such as Ni, Ti) and perhaps less common insulators will oxidize even upon short exposure to air. Exposure of surfaces to lithography resists and solvents limit the range of device fabrication schemes unless cleaning methods, such as solvent cleans or exposure to UV-ozone, are employed and qualified to yield reproducible and well-defined surfaces on which to build molecular devices.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.