Granular description of charging kinetics in silicon nanocrystals memories

Solid-State Electronics

Volumn 50, Issue 2, 2006, Pages 134-141

  Busseret, C ^a   Ferraton, S ^a   Montes L ^a   Zimmermann, J ^a  

^a IMEP LAHC   (France)

Author keywords

Charge dynamics; Modeling; Non volatile single electron memory; Silicon nanocrystals

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DATA STORAGE EQUIPMENT; ELECTRONS; NANOSTRUCTURED MATERIALS; REACTION KINETICS;

CHARGE DYNAMICS; MODELING; NON-VOLATILE SINGLE-ELECTRON MEMORY; SILICON NANOCRYSTALS;

SILICON;

EID: 32344434995     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.10.033     Document Type: Article

References (19)

1. K. Yano, T. Ishii, T. Hashimoto, T. Kobayashi, and F. Murai Room-temperature single-electron memory IEEE Trans Electron Dev 41 1994 1628 1637
2. S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E.F. Crabbe, and K. Chan A silicon nanocrystals based memory Appl Phys Lett 68 1996 1377 1379
3. H. Hanafi, S. Tiwari, and I. Khan Fast and long retention-time nano-crystal memory IEEE Trans Electron Dev 43 1996 1553 1558
4. S. Ferraton, L. Montès, A. Souifi, and J. Zimmermann Charge dynamics of silicon nanocrystals in MOS capacitors Microelectron Eng 73-74 2004 741 745
5. W.D. Brown, and J. Brewer Nonvolatile semiconductor memory technology 1998 IEEE New York
6. B. De Salvo, G. Ghibaudo, and G. Pananakakis Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices IEEE Trans Electron Dev 48 2001 1789 1799
7. y substrates for nanoelectronic devices J Cryst Growth 23 2000 1004 1008
8. S. Ferraton, L. Montès, A. Souifi, and J. Zimmermann Evidence of room temperature charging effects of silicon nanocrystals inside metal-oxide-semiconductor capacitors using feedback charge measurements Microelectron Eng 67-68 2003 858 864
9. T. Baron, F. Mazen, C. Busseret, A. Souifi, and P. Mur Nucleation control of CVD growth silicon nanocrystals for quantum devices Microelectron Eng 61-62 2002 511 515
10. T.J. Mego Improved feedback charge method for quasistatic CV measurements in semiconductors Rev Sci Instr 57 11 1986 2798 2805
11. 2/Si structures Solid-State Electron 38 1995 1465 1471
12. A.T. Fromhold Jr. Quantum mechanics for applied physics and engineering 1981 Academic Press
13. S.M. Sze Physics of semiconductor devices 2nd ed. 1981 Wiley New York
14. D. Vasileska The influence of space-quantization effects and poly-gate depletion on the threshold voltage, inv. layer and total gate capacitances in scaled MOSFET J Model Simul Microsyst 1 1999 49 56
15. J.S. Blakemore Approximations for Fermi-Dirac integrals, especially the function F1/2(N) used to describe electron density in a semiconductor Solid-State Electron 25 1982 1067 1076
16. K.K. Likharev Single electron devices and their application Proc IEEE 87 1999 606 632
17. K. Yano, T. Ishii, T. Hashimoto, T. Kobayashi, F. Murai, and K. Seki Transport characteristics of poly-crystalline silicon with influence by single electron charging at room temperature Appl Phys Lett 67 1995 828 830
18. 2. In: Proceedings of SPIE 2004, vol. 5470, p. 560.
19. C. Busseret, A. Souifi, T. Baron, G. Guillot, M.N. Semeria, and J. Gautier Discharge mechanisms modelling in LPCVD silicon nanocrystals using C-V and capacitance transient techniques Superlattices Microstruct 28 2000 493 500