Evidence of room temperature charging effects of silicon nanocrystals inside metal-oxide-semiconductor capacitors using feedback charge measurements

Microelectronic Engineering

Volumn 67-68, Issue , 2003, Pages 858-864

  Ferraton, S ^a   Montes L ^a   Souifi, A ^b   Zimmermann, J ^a  

^a IMEP LAHC   (France)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

Electrical characterization; Non volatile single electron memory; Quasi static capacitance; Silicon nanocrystals

Indexed keywords

CAPACITANCE; CHARGE TRANSFER; CURRENT VOLTAGE CHARACTERISTICS; NANOSTRUCTURED MATERIALS; SILICON;

CHARGE DENSITY;

MOS CAPACITORS;

EID: 0037682181     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00193-X     Document Type: Conference Paper

References (6)

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5. Sze S.M. Physics of Semiconductors Devices. 2nd Edition: 1981;Wiley, New York. Chapter 7.
6. Montès L., Baron T., De Salvo B., Ferraton S., Zimmermann J., Gautier J. Proceedings of the 13th International Conference on Microelectronics. October 2001, pp. 39-42;Rabat, Morocco.