High power and high breakdown δ-doped In0.35Al 0.65As/In0.35Ga0.65As metamorphic HEMT

Solid-State Electronics

Volumn 50, Issue 2, 2006, Pages 291-296

  Yu, Shu Jenn ^a   Hsu, Wei Chou ^a   Chen, Yeong Jia ^a   Wu, Chang Luen ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b Transcom Inc   (Taiwan)

Author keywords

Breakdown; In0.35Al0.65As In 0.35Ga0.65As MHEMT; Metamorphic

Indexed keywords

ELECTRIC BREAKDOWN; GAIN MEASUREMENT; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SIGNAL PROCESSING;

BANDGAP ENGINEERING; METAMORPHIC; SMALL-SIGNAL DEVICE MODEL;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 32344432794     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.12.003     Document Type: Article

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