High performance metamorphic In0.32Al0.68As/In0.33Ga0.67As HEMT's on GaAs substrate with an inverse step InAlAs metamorphic buffer

Annual Device Research Conference Digest

Volumn , Issue , 1998, Pages 34-35

  Zaknoune, M ^a   Cordier, Y ^a   Bollaert, S ^a   Druelle, Y ^a   Theron, D ^a   Crosnier, Y ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRON TRANSPORT PROPERTIES; ELECTRONS; ENERGY GAP; HALL EFFECT; LATTICE CONSTANTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

BAND GAP; ELECTRON VELOCITY; LATTICE MISMATCH; METAMORPHIC STRUCTURE; SCHOTTKY BARRIER HEIGHT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032311837     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)