Improving high-κ gate dielectric properties by high-pressure water vapor annealing

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 4-7, 2006, Pages

  Punchaipetch, Prakaipetch ^a   Miyashita, Makoto ^a   Uraoka, Yukiharu ^a   Fuyuki, Takashi ^a   Sameshima, Toshiyuki ^b   Horii, Sadayoshi ^c  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^c HITACHI KOKUSAI ELECTRIC INC   (Japan)

Author keywords

High gate oxides; High pressure water vapor annealing; Low temperature annealing

Indexed keywords

CAPACITANCE; ELECTRIC PROPERTIES; HIGH PRESSURE EFFECTS; LEAKAGE CURRENTS; VAPORS;

HIGH-Κ GATE OXIDES; HIGH-PRESSURE WATER VAPOR ANNEALING; LOW TEMPERATURE ANNEALING;

ANNEALING;

EID: 32044453342     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L120     Document Type: Article

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