메뉴 건너뛰기




Volumn 45, Issue 4-7, 2006, Pages

Improving high-κ gate dielectric properties by high-pressure water vapor annealing

Author keywords

High gate oxides; High pressure water vapor annealing; Low temperature annealing

Indexed keywords

CAPACITANCE; ELECTRIC PROPERTIES; HIGH PRESSURE EFFECTS; LEAKAGE CURRENTS; VAPORS;

EID: 32044453342     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L120     Document Type: Article
Times cited : (14)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.