Heat treatment of amorphous and polycrystalline silicon thin films with H2O vapor

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 2 PART A, 1998, Pages

  Sameshima, Toshiyuki ^a   Satoh, Mitsuru ^a   Sakamoto, Keiji ^a   Hisamatsu, Ai ^a   Ozaki, Kentaro ^a   Saitoh, Keiko ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

Hydrogen concentration; Laser crystallization; LPCVD a Si; Optical absorption; Photoconductivity

Indexed keywords

AMORPHOUS MATERIALS; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY OF SOLIDS; HEAT TREATMENT; LIGHT ABSORPTION; PHOTOCONDUCTIVITY; PHOTONS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; THIN FILMS;

LASER CRYSTALLIZATION; LOW PRESSURE CHEMICAL VAPOR AMORPHOUS SILICON (LPCVD A SI);

SEMICONDUCTING FILMS;

EID: 0031998149     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l112     Document Type: Article

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