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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 33-36, 2005, Pages

Temperature dependence of oxidation-induced changes of work function on Si(001)2 × 1 surface studied by real-time ultraviolet photoelectron spectroscopy

(2) Ogawa, Shuichi a Takakuwa, Yuji a

a TOHOKU UNIVERSITY (Japan)

Author keywords

Band bending; Diffusion; Layer by layer oxidation; Oxygen adsorption; Rate limiting reaction; Real time monitoring; Si surface; UPS; Work function

Indexed keywords

ADSORPTION; CHEMICAL BONDS; DIFFUSION; OXIDATION; PHOTOELECTRON SPECTROSCOPY; THERMAL EFFECTS; ULTRAVIOLET RADIATION;

BAND BENDING; LAYER-BY-LAYER OXIDATION; OXYGEN ADSORPTION; RATE-LIMITING REACTIONS; REAL-TIME MONITORING; SI SURFACES; UPS; WORK FUNCTIONS;

CRYSTAL ORIENTATION;

EID: 32044438702 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.44.L1048 Document Type: Article

Times cited : (26)

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