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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 2 A, 2000, Pages 560-567

Initial stage of oxidation of Si(001)-2 × 1 surface studied by X-ray photoelectron spectroscopy

(4) Harada, Yoshinao a Niwa, Masaaki a Nagatomi, Takaharu b Shimizu, Ryuichi b

a PANASONIC CORPORATION (Japan)

b OSAKA UNIVERSITY (Japan)

Author keywords

Initial oxidation; Si(001) 2 1; SiO2; Suboxide; XPS

Indexed keywords

CHEMICAL BONDS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; NUCLEATION; OXIDATION; SILICA; SURFACE PHENOMENA; SURFACE STRUCTURE; X RAY PHOTOELECTRON SPECTROSCOPY;

SURFACE RECONSTRUCTION;

SILICON WAFERS;

EID: 0033872419 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.560 Document Type: Article

Times cited : (14)

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