BGaN micro-islands as novel buffers for GaN hetero-epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 50-52, 2005, Pages

  Akasaka, Tetsuya ^a   Makimoto, Toshiki ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

AIGaN GaN heterostructure; BGaN; Boron; Dislocation; Epitaxy; GaN; Memory effect; Sapphire; Semi insulating; Two dimensional electron gas

Indexed keywords

EPITAXIAL GROWTH; GALLIUM NITRIDE; HETEROJUNCTIONS; MICROSTRUCTURE; SAPPHIRE; SEMICONDUCTOR DOPING;

AIGAN/GAN HETEROSTRUCTURES; BGAN; DISLOCATION; MEMORY EFFECT; SEMI-INSULATING; TWO-DIMENSIONAL ELECTRON GAS;

BORON COMPOUNDS;

EID: 31844454570     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.L1506     Document Type: Article

References (20)

1. S. Sakai, Y. Ueta and Y. Terauchi: Jpn. J. Appl. Phys. 32 (1993) 4413.
2. A. Y. Polyakov, M. Shin, W. Qian. M. Skowronski. D. W. Greve and R. G. Wilson: J. Appl. Phys. 81 (1997) 1715.
3. V. Vezin, S. Yatagai, H. Shiraki and S. Uda: Jpn. J. Appl. Phys. 36 (1997) L1483.
4. K. Watanabe, T. Taniguchi and H. Kanda: Nat. Mater. 3 (2004) 404.
5. H. Amano, N. Sawaki, I. Akasaki and Y. Toyoda: Appl. Phys. Lett. 48 (1986) 353.
6. S. Nakamura, Y. Harada and M. Seno: Appl. Phys. Lett. 58 (1991) 2021.
7. S. D. Lester, F. A. Ponce, M. G. Craford and D. A. Steigerwald: Appl. Phys. Lett. 66 (1995) 1249.
8. M. Ikeda and S. Uchida: Phys. Status Solidi A 194 (2002) 407.
9. D. C. Look and R. J. Molnar: Appl. Phys. Lett. 70 (1997) 3377.
10. M. G. Cheong, K. S. Kim, C. S. Oh, N. W. Namgung, G. M. Yang, C.-H. Hong, K. Y. Lim, E.-K. Suh, K. S. Nahm, H. J. Lee, D. H. Lim and A. Yoshikawa: Appl. Phys. Lett. 77 (2000) 2557.
11. S. Heikman, S. Keller. S. P. DenBaars and K. Mishra: Appl. Phys. Lett. 81 (2002) 439.
12. H. Amano, I. Akasaki, K. Hiramatsu, N. Koide and N. Sawaki: Thin Solid Films 163 (1988) 415.
13. A. Usui, H. Sunakawa, A. Sakai and A. Yamaguchi: Jpn. J. Appl. Phys. 36 (1997) L899.
14. S. Tanaka, M. Takeuchi and Y. Aoyagi: Jpn. J. Appl. Phys. 39 (2000) L831.
15. K. Hiramatsu, K. Nishiyama, A. Motogaito, H. Miyake, Y. Iyechika and T. Maeda: Phys. Status Solidi A 176 (1999) 535.
16. T. Akasaka, Y. Kobayashi, S. Ando, N. Kobayashi and M. Kumagai: J. Cryst. Growth 189-190 (1998) 72.
17. C. H. Wei and J. H. Edgar: J. Cryst. Growth 208 (2000) 179.
18. A. Sakai, H. Sunakawa and A. Usui: Appl. Phys. Lett. 71 (1997) 2259.
19. J. C. Zolper, R. G. Wilson, S. J. Pearton and R. A. Stall: Appl. Phys. Lett. 68 (1996) 1495.
20. P. J. Hansen, Y. E. Strausser, A. N. Erickson, E. J. Tarsa, P. Kozodoy, E. G. Brazel, J. P. Ibbetson, U. Mishra, V. Narayanamurti, S. P. DenBaars and J. S. Speck: Appl. Phys. Lett. 72 (1998) 2247.