Structure, chemistry, and electrical performance of silicon oxide-nitride-oxide stacks on silicon

Journal of the Electrochemical Society

Volumn 151, Issue 12, 2004, Pages

  Levin, Igor ^a   Kovler, Mark ^b   Roizin, Yakov ^b   Vofsi, Menachem ^b   Leapman, Richard D ^c   Goodman, Gary ^d   Kawada, Norio ^e   Funahashi, Munabu ^e  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b Tower Semiconductor Limited ^*  (Israel)

^c NATIONAL INSTITUTES OF HEALTH   (United States)

^d CHARLES EVANS AND ASSOCIATES   (United States)

^e RIGAKU CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LOSS SPECTROSCOPY; INTERFACES (MATERIALS); MOLECULAR STRUCTURE; OXIDES; SECONDARY ION MASS SPECTROMETRY; SILICA; TRANSMISSION ELECTRON MICROSCOPY;

DEPTH DISTRIBUTION; ION MILLING; RATIONAL OPTIMIZATION; STACKS;

MULTILAYERS;

EID: 10844227442     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1811594     Document Type: Article

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