Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application

Thin Solid Films

Volumn 500, Issue 1-2, 2006, Pages 231-236

  Yang, Woo Seok ^a   Kang, Sung Weon ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Etching; Hydrofluoric acid; Microelectrochemical systems; Oxides

Indexed keywords

ALUMINA; DEPOSITION; ETCHING; HYDROFLUORIC ACID; MICROELECTROMECHANICAL DEVICES;

ATOMIC LAYER DEPOSITION (ALD); CHEMICAL STABILITY; WET ETCHING;

DIELECTRIC FILMS;

EID: 31644451524     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.11.014     Document Type: Article

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