Modeling and characterization of gas-phase etching of thermal oxide and TEOS oxide using anhydrous HF and CH3OH

Journal of the Electrochemical Society

Volumn 143, Issue 3, 1996, Pages 1099-1103

  Lee, Chun Su ^a   Baek, Jong Toe ^a   Yoo, Hyung Joun ^a   Woo, Seong Ihl ^b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; CHARACTERIZATION; HYDROFLUORIC ACID; IONIZATION; METHANOL; MOLECULES; PRESSURE; SILICA; SILICON WAFERS; TEMPERATURE;

BRUNAUER-EMMETT-TELLER EQUATION; GAS PHASE ETCHING; TETRETHYLORTHOSILICATE; THERMAL OXIDE;

ETCHING;

EID: 0030104993     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836590     Document Type: Article

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