Topography and Local Electrical Properties of Nondoped Polycrystalline Silicon Thin Films Evaluated Using Conductive-Mode Atomic Force Microscopy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 11 A, 2003, Pages

  Aya, Yoichiro ^a   Ando, Atsushi ^b   Yamasaki, Satoshi ^b   Wakisaka, Kenichiro ^a  

^a SANYO ELECTRIC CO LTD   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Conductive mode atomic force microscopy; Current image; Excimer laser annealing; Grain boundary; Nondoped; Polycrystalline silicon; Trapping model

Indexed keywords

AMORPHOUS SILICON; ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTALLIZATION; ELECTRIC PROPERTIES; EXCIMER LASERS; GRAIN BOUNDARIES; POLYCRYSTALLINE MATERIALS; TRANSMISSION ELECTRON MICROSCOPY;

CONDUCTIVE MODE; LASER ANNEALING; TOPOGRAPHY;

AMORPHOUS FILMS;

EID: 0346907125     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l1302     Document Type: Article

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