Growth of epitaxial silicon film at low temperature by using sputtering-type electron cyclotron resonance plasma

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 3 A, 1999, Pages

  Gao, Junsi ^a   Nakashima, Hiroshi ^a   Sakai, Naofumi ^a   Gao, Dawei ^a   Wang, Junli ^a   Furukawa, Katsuhiko ^a   Muraoka, Katsunori ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CLEANING; ELECTRON CYCLOTRON RESONANCE; EPITAXIAL GROWTH; FILM GROWTH; PLASMA APPLICATIONS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SILICON WAFERS; SPUTTER DEPOSITION; THIN FILMS;

PLASMA BOMBARDMENT;

SEMICONDUCTING FILMS;

EID: 0032638832     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l220     Document Type: Article

References (8)