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Applied Physics A: Materials Science and Processing

Volumn 70, Issue 4, 2000, Pages 475-480

Theoretical study on various models for the domain boundaries in epitaxial GaN films

(3) Wang, S Q a Wang, Y M a Ye, H Q a

a INSTITUTE OF METAL RESEARCH (China)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CHEMICAL BONDS; COMPUTER SIMULATION; CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; MATHEMATICAL MODELS; MOLECULAR DYNAMICS;

COVALENT CRYSTAL; FORMATION ENERGY; KEATING POTENTIAL MODEL; SEMICONDUCTING GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034171796 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s003390051071 Document Type: Article

Times cited : (10)

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