Low-voltage, high-speed AlSb/InAsSb HEMTs

Electronics Letters

Volumn 35, Issue 10, 1999, Pages 847-848

  Boos, J B ^a   Yang, M J ^a   Bennett, B R ^a   Park, D ^a   Kruppa, W ^a   Bass, R ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRIC CONDUCTANCE; ELECTRIC POTENTIAL; GATES (TRANSISTOR); HETEROJUNCTIONS; INFRARED RADIATION; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSCONDUCTANCE;

MICROWAVE TRANSCONDUCTANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032662797     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990536     Document Type: Article

References (4)

1. BOOS, J.B., KRUPPA, W., BENNETT, B.R., PARK, D., KIRCHOEFER, S.W., BASS, R., and DIETRICH, H.B.: 'AlSb/InAs HEMT's for low-voltage, high-speed applications', IEEE Trans., 1998, ED-45, (9), pp. 1869-1875
2. BENNETT, B.R., SHANABROOK, B.V., and TWIGG, M.E.: 'Anion control in molecular beam epitaxy of mixed As/Sb III-V heterostructures', J. Appl. Phys., 1999, 85, (4), pp. 2157-2161
3. BOOS, J.B., YANG, M.J., BENNETT, B.R., PARK, D., KNIPPA, W., YANG, C.H., and BASS, R.: '0.1 μm AlSb/InAs HEMTs with InAs subchannel', Electron. Lett., 1998, 34, (15), pp. 1525-1526
4. ROWELL, N.L.: 'Infrared photoluminescence of intrinsic InSb', Infrared Phys., 1988, 28, (1), pp. 37-42