Dependence of Hooge parameter of InAs heterostructure on temperature

Microelectronics Reliability

Volumn 40, Issue 11, 2000, Pages 1921-1924

  Tacano, M ^a   Ando, M ^a   Shibasaki, I ^b   Hashiguchi, S ^c   Sikula, J ^d   Matsui, T ^e  

^a Meisei University   (Japan)

^b ASAHI CHEMICAL INDUSTRY CO   (Japan)

^c UNIVERSITY OF YAMANASHI   (Japan)

^d BRNO UNIVERSITY OF TECHNOLOGY   (Czech Republic)

^e Communication Research Laboratory ^*  (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; SPURIOUS SIGNAL NOISE; SUBSTRATES;

HOOGE THEORY; SEMI-INSULATING SUBSTRATES;

MICROELECTRONICS;

EID: 0034325310     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(00)00064-0     Document Type: Article

References (8)

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2. Hashiguchi S, Yamagishi Y, Ohki M, Tacano M, Sikula J, Matsui T. The 15th International Conference on Noise in Physical Systems and 1/f Fluctuations. 1999. p. 287-90.
3. Hooge FN. IEEE trans Electron Devices 1994;41:1926.
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