Band-to-band illumination in noise semiconductor spectroscopy

Semiconductor Science and Technology

Volumn 11, Issue 2, 1996, Pages 177-180

  Dyakonova, N V ^a   Levinshtein, M E ^a   Rumyantsev, S L ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CARRIER CONCENTRATION; CHARGE CARRIERS; ELECTRON ENERGY LEVELS; LIGHTING; NUMERICAL METHODS; SPECTROSCOPY;

BAND TO BAND ILLUMINATION; MINORITY CARRIERS; NOISE SEMICONDUCTOR SPECTROSCOPY; NOISE SPECTRA; P-N JUNCTIONS; TRAP CONCENTRATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030082120     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/2/005     Document Type: Article

References (9)

1. Levinshtein M E and Rumyantsev S L 1994 Semicond. Sci. Technol. 9 1183
2. Copland J A 1971 IEEE Trans. Electron Devices 18 50
3. Magarshack J, Mircea A and Rossel A 1972 Acta Electron. 15 233
4. Dyakonova N V, Levinshtein M E and Rumyantsev S L 1991 Sov. Phys. Semicond. 25 217
5. Kirtley J R, Theis T N, Mooney P M and Wright S L 1988 J. Appl. Phys. 63 1541
6. Levinshtein M E and Rumyantsev S L 1995 Semiconductors 29 74
7. Palmour J W, Levinshtein M E and Rumyantsev S L 1995 IEEE Trans. Electron. submitted
8. Dyakonova N V and Levinshtein M E 1989 Sov. Phys. Semicond. 23 175
9. Dyakonova N V, Levinshtein M E, Palmour J W and Rumyantsev S L 1995 Semicond. Sci. Technol. 10 1126