Quantifying charging damage in gate oxides of antenna structures for WLR monitoring

Microelectronics Reliability

Volumn 44, Issue 8, 2004, Pages 1245-1250

  Smeets, David ^a   Fazekas, Josef ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANTENNAS; ELECTRIC POTENTIAL; ION IMPLANTATION; MATHEMATICAL MODELS; PLASMA ETCHING; PROBABILITY; SILICON WAFERS; THREE TERM CONTROL SYSTEMS;

ANTENNA STRUCTURES; COULOMB REPULSION; ELECTRON TRAPPING RATE (ETR); WAFER LEVEL RELIABILITY (WLR);

MICROELECTRONICS;

EID: 3142706664     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.04.010     Document Type: Article

References (12)

1. Brozek T, et al. In-line testing of antenna-type test structures for separation of sources of process-induced damage. in: Proceedings SPIE, 1997;vol. 3215:101-108.
2. Cheung KP. On the use of Fowler-Nordheim stress to reveal plasma-charging damage. In: IEEE Proceedings of International Symposium on Plasma & Process Induced Damage (P2ID). 1996:11-14.
3. Watanabe, et al. A wafer level monitoring method for plasma charging damage using antenna PMOSFET test structure. International Conference on Microelectronics Test Structures. 1996:273ff.
4. Cheung K.P. An efficient method for plasma-charging damage measurement. IEEE Electron Device Letters. 15/11:1994;460-462.
5. 2 under charge injection stress. Journal of Applied Physics. 60(6):1986;2024-2035.
6. Wolters D.R., et al. Kinetics of charge trapping in dielectrics. Journal of Applied Physics. 58:1985;831-837.
7. Smeets D, Martin A, Fazekas J, WLR monitoring methodology for assessing charging damage on oxides thicker than 3 nm using antenna structures. In: Proceedings of Integrated Reliability Workshop IRW, 2001; p. 67-73.
8. Stathis J. Percolation models for gate oxide breakdown. Journal of Applied Physics. 86(10):1999;5757-5766.
9. Degraeve R., et al. New insights in the relation between electron trap generation and the statistical properties of oxide breakdown. IEEE Transactions on Electron Devices. 45(4):1998;904-911.
10. Cheung K.P. Unifying the Thermal-Chemical (TC) and Anode-Hole-Injection (AHI) gate-oxide breakdown models. Microelectronics Reliability. 41:2001;193-199.
11. 2 time-dependent-dielectric-breakdown. In: IEEE Proceedings of International Symposium on Plasma & Process Induced Damage (P2ID). 2003;134 -137.
12. Smeets D, Martin A, Scarpa A. A general concept for monitoring plasma induced charge damage. In: IEEE Proceedings of International Symposium on Plasma & Process Induced Damage (P2ID). 2003;36-39.