WLR monitoring methodology for assessing charging damage on oxides thicker than 4 nm using antenna structures

International Integrated Reliability Workshop Final Report

Volumn , Issue , 2001, Pages 67-73

  Smeets, David ^a   Martin, Andreas ^a   Fazekas, Josef ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANTENNAS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); LEAKAGE CURRENTS; PROBABILITY;

PLASMA INDUCED DAMAGES (PID);

CMOS INTEGRATED CIRCUITS;

EID: 0035567088     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. In-line characterization technique for performance and yield enhancement in microelectronic manufacturing
2. On the use of Fowler-Nordheim stress to reveal plasma-charging damage
3. A wafer level monitoring method for plasma-charging damage using antenna PMOSFET test structures
4. An efficient method for plasma-charging damage measurement
5. CSQ-test: A special J-ramp method approved for fast routine testing of thin dielectric films