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Volumn , Issue , 1996, Pages 11-14
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On the use of Fowler-Nordheim stress to reveal plasma-charging damage
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Author keywords
[No Author keywords available]
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Indexed keywords
CARRIER CONCENTRATION;
ELECTRIC CURRENTS;
ELECTRON TUNNELING;
INTERFACES (MATERIALS);
OXIDES;
PLASMA ETCHING;
SEMICONDUCTING SILICON;
SILICA;
TRANSCONDUCTANCE;
VOLTAGE MEASUREMENT;
ELECTRON TRAPPING;
FOWLER-NORDHEIM STRESS;
HOLE TRAPPING;
INITIAL ELECTRON TRAPPING RATE;
INTERFACE STATE DENSITY;
PLASMA CHARGING DAMAGE;
ELECTRIC FIELD EFFECTS;
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EID: 0029713265
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (14)
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References (1)
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