Intrinsic properties of NiSi

Journal of Alloys and Compounds

Volumn 262-263, Issue , 1997, Pages 235-237

  Meyer, B ^a   Gottlieb, U ^a   Laborde, O ^b   Yang, Hongshun ^b   Lasjaunias, J C ^b   Sulpice, A ^b   Madar, R ^a  

^a LABORATOIRE DES MATÉRIAUX ET DU GÉNIE PHYSIQUE   (France)

^b LABORATOIRE DE CRISTALLOGRAPHIE   (France)

Author keywords

Hall effect; NiSi; Resistivity; Si microelectronics; Specific heat

Indexed keywords

CRYSTAL GROWTH FROM MELT; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY OF SOLIDS; HALL EFFECT; LATTICE CONSTANTS; MICROELECTRONICS; SINGLE CRYSTALS; SPECIFIC HEAT OF SOLIDS;

LOW TEMPERATURE SPECIFIC HEAT; SILICON MICROELECTRONICS;

NICKEL ALLOYS;

EID: 0031275532     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-8388(97)00388-5     Document Type: Article

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