Characteristics of a new camel-gate field effect transistor (CAMFET) with a composite channel structure

Semiconductor Science and Technology

Volumn 19, Issue 7, 2004, Pages 912-916

  Lai, Po Hsien ^a   Chuang, Hung Ming ^a   Tsai, Sheng Fu ^a   Kao, Chung I ^a   Chen, Horng Rung ^b   Chen, Chun Yuan ^a   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; GAIN CONTROL; MICROWAVE DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS; TRANSCONDUCTANCE;

CAMEL-GATE FIELD EFFECT TRANSISTORS (CAMFET); CHANNEL STRUCTURES; DRAIN SATURATION CURRENTS; ELECTRON VELOCITY;

FIELD EFFECT TRANSISTORS;

EID: 3142670554     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/7/023     Document Type: Article

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