Influence of channel doping-profile on camel-gate field effect transistors

IEEE Transactions on Electron Devices

Volumn 43, Issue 6, 1996, Pages 871-876

  Lour, Wen Shiung ^a   Tsai, Jung Hui ^a   Laih, Lib Wen ^a   Liu, Wen Chau ^b  

^a NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; FERMI LEVEL; GATES (TRANSISTOR); NUMERICAL METHODS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

CAMEL GATE FIELD EFFECT TRANSISTOR; CHANNEL DOPING PROFILE; THERMIONIC EMISSION; VOLTAGE INDEPENDENT TRANSCONDUCTANCE;

FIELD EFFECT TRANSISTORS;

EID: 0030169107     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.502117     Document Type: Article

References (13)

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