Novel approach for synthesizing of nanometer-sized Si crystals in SiO2 by ion implantation and their optical characterization

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 112, Issue 1-4, 1996, Pages 214-218

  Shimizu Iwayama, Tsutomu ^a   Terao, Yoichi ^a   Kamiya, Atsushi ^a   Takeda, Motonori ^a   Nakao, Setsuo ^b   Saitoh, Kazuo ^b  

^a AICHI UNIVERSITY OF EDUCATION   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL GROWTH; ENERGY GAP; INTERFACES (MATERIALS); NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SILICA; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

EXCITATION ENERGY; LUMINESCENCE INTENSITY; PHOTOLUMINESCENCE SPECTROSCOPY; VACUUM THERMAL ANNEALING;

ION IMPLANTATION;

EID: 0030563351     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01013-0     Document Type: Article

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