Light particle irradiation effects in Si nanocrystals

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 147, Issue 1-4, 1999, Pages 356-360

  Kachurin, G A ^a   Ruault, M O ^b   Gutakovsky, A K ^a   Kaitasov O ^b   Yanovskaya, S G ^a   Zhuravlev, K S ^a   Bernas, H ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b CENTRE DE CALCUL DE L INSTITUT NATIONAL DE PHYSIQUE NUCLEAIRE ET DE PHYSIQUE DES PARTICULES   (France)

Author keywords

Electron microscopy; Embedded nanocrystals; Light particle irradiation; Photo luminescence

Indexed keywords

AMORPHIZATION; ANNEALING; ELECTRON ENERGY LEVELS; INTERFACES (MATERIALS); ION BOMBARDMENT; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; POINT DEFECTS; QUANTUM THEORY; SEMICONDUCTING SILICON; SILICA; TRANSMISSION ELECTRON MICROSCOPY;

LIGHT PARTICLE IRRADIATION; NON RADIATIVE RECOMBINATION CENTER; QUANTUM SIZE EFFECT;

ION IMPLANTATION;

EID: 0032738919     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00586-2     Document Type: Article

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