Structural properties of relaxed Ge buffer layers on Si (0 0 1): Effect of layer thickness and low temperature Si initial buffer

Journal of Materials Science: Materials in Electronics

Volumn 15, Issue 7, 2004, Pages 411-417

  Myrberg, T ^a   Jacob, A P ^a   Nur, O ^a   Friesel, M ^a   Willander, M ^a   Patel, C J ^b   Campidelli, Y ^c   Hernandez, C ^c   Kermarrec, O ^c   Bensahel, D ^c  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b University of North Carolina at Charlotte   (United States)

^c STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL RELAXATION; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; CRYSTALLIZATION; EPITAXIAL GROWTH; LOW TEMPERATURE EFFECTS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SURFACE ROUGHNESS; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY;

CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; HIGH RESOLUTION ROCKING CURVES; RELAXED GERMANIUM BUFFER LAYERS; TWO DIMENSIONAL RECIPROCAL SPACE MAPPING;

SEMICONDUCTING GERMANIUM;

EID: 3142656713     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/B:JMSE.0000031594.36498.27     Document Type: Article

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