A comparison of avalanche breakdown probabilities in semiconductor materials

Journal of Modern Optics

Volumn 51-9, Issue 10, 2004, Pages 1315-1321

  Ng, J S ^a   Tan, C H ^a   David, J P R ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; ELECTRIC FIELD EFFECTS; IMPACT IONIZATION; PHOTODIODES; PHOTONS; PROBABILITY; SEMICONDUCTOR MATERIALS; SOLID STATE DEVICE STRUCTURES;

AVALANCHE PHOTODIODES (APD); BREAKDOWN PROBABILITY; PHOTON ABSORPTION; SINGLE PHOTONS;

SOLID STATE PHYSICS;

EID: 3142511145     PISSN: 09500340     EISSN: 13623044     Source Type: Journal    
DOI: 10.1080/09500340408235274     Document Type: Article

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