Avalanche multiplication characteristics of Al0.8Ga0.2As diodes

IEEE Transactions on Electron Devices

Volumn 48, Issue 10, 2001, Pages 2198-2204

  Ng, B K ^b   David, J P R ^a,b   Plimmer, S A ^b   Rees, G J ^b   Tozer, R C ^a,b   Hopkinson, M ^b   Hill, G ^b  

^a IEEE

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

AlGaAs; APD; Avalanche multiplication; Avalanche photodiodes; Impact ionization; Ionization coefficients

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC FIELD EFFECTS; ELECTRIC VARIABLES MEASUREMENT; IMPACT IONIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS;

ALUMINUM GALLIUM ARSENIDE DIODES; ELECTRON IONIZATION; HOLE IONIZATION;

AVALANCHE DIODES;

EID: 0035471667     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.954454     Document Type: Article

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