Comparison of device performance and measured transport parameters in widely-varying Cu(In,Ga) (Se,S) solar cells

Progress in Photovoltaics: Research and Applications

Volumn 14, Issue 1, 2006, Pages 25-43

  Repins, I L ^a,j   Stanbery, B J ^b   Young, D L ^c   Li, S S ^d   Metzger, W K ^c   Perkins, C L ^c   Shafarman, W N ^e   Beck, M E ^f   Chen, L ^g   Kapur, V K ^h   Tarrant, D ⁱ   Gonzalez, M D ^a   Jensen, D G ^a   Anderson, T J ^d   Wang, X ^d   Kerr, L L ^d   Keyes, B ^c   Asher, S ^c   Delahoy, A ^g   Von Reedern, B ^c  

^a ITN ENERGY SYSTEMS INC   (United States)

^b IT Corporation   (United States)

^c NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^d UNIVERSITY OF FLORIDA   (United States)

^e UNIVERSITY OF DELAWARE   (United States)

^f Global Solar Energy Inc   (United States)

^g Energy Photovoltaics Inc   (United States)

^h Int Solar Electric Technology   (United States)

ⁱ Shell Solar Industries LP   (United States)

^j ITN Energy Systems   (United States)

more..

Author keywords

Characterization; CIGSS; Correlation; Thin film photovoltaics; Transport

Indexed keywords

CAPACITANCE; CARBIDES; CARRIER MOBILITY; ELECTRIC POTENTIAL; TRANSPORT PROPERTIES;

CIGSS; CORRELATION; THIN-FILM PHOTOVCOLTAICS;

PHOTOELECTRIC CELLS;

EID: 31344452448     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.654     Document Type: Article

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