Correlation between deep defect states and device parameters in CuIn1-xGaxSe2 photovoltaic devices

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2002, Pages 596-599

  Heath, Jennifer T ^a   Cohen, J David ^a   Shafarman, William N ^b  

^a UNIVERSITY OF OREGON   (United States)

^b UNIVERSITY OF DELAWARE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; COPPER COMPOUNDS; CRYSTAL DEFECTS; CRYSTAL GROWTH; ENERGY GAP; PHOTOCURRENTS; SUBSTRATES;

COPPER INDIUM GALLIUM SELENIDE; PHOTOCURRENT SPECTROSCOPY; THERMAL ENERGY DISTRIBUTION; TRANSIENT PHOTOCAPACITANCE;

PHOTOVOLTAIC CELLS;

EID: 0036948628     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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