Device and material characterization of Cu(InGa)Se2 solar cells with increasing band gap

Journal of Applied Physics

Volumn 79, Issue 9, 1996, Pages 7324-7328

  Shafarman, William N ^a   Klenk, Reiner ^a   McCandless, Brian E ^a  

^a UNIVERSITY OF DELAWARE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000582361     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361431     Document Type: Article

References (14)

1. A. Rockett and R. W. Birkmire, J. Appl. Phys. 70, R81 (1991).
2. J. Hedstrom, H. Ohlsen, M. Bodegard, A. Kylner, L. Stolt, D. Hariskos, M. Ruckh, and H. W. Schock, in Proceedings of the 23rd IEEE Photovoltaic Specialists Conference, Louisville, KY (Institute of Electrical and Electronics Engineers, New York, 1993), p. 364.
3. J. R. Tuttle, M. A. Contreras, T. J. Gillespie, K. R. Ramanathan, A. L. Tennant, J. Keane, A. M. Gabor and R. Noufi, Prog. PV Res. Appl. 3, 235 (1995).
4. H. W. Schock, in Proceedings of the 12th European Photovoltaic Solar Energy Conference, Amsterdam, The Netherlands (H. S. Stephens, London, 1994), p. 944.
5. J. M. Stewart, W. S. Chen, W. E. Devaney, and R. A. Mickelsen, in Proceedings of the 7th International Conference on Ternary and Multinary Compounds, edited by S. K. Deb and A. Zunger (Materials Research Society, Pittsburgh, 1987), p. 59.
6. M. A. Contreras, J. Tuttle, A. Gabor, A. Tennant, K. Ramanathan, S. Asher, A. Franz, J. Keane, L. Wang, and R. Noufi, in Proceedings of the 24th IEEE Photovoltaic Specialists Conference, Waikoloa, HI (Institute of Electrical and Electronics Engineers, New York, 1995), p. 68.
7. B. Dimmler, H. Dittrich, R. Menner, and H. W. Schock, in Proceedings of the 19th IEEE Photovoltaic Specialists Conference, New Orleans, LA (Institute of Electrical and Electronics Engineers, New York, 1987), p. 1454.
8. J. Kessler, K. Velthaus, M. Ruckh, R. Laichinger, H. W. Schock, D. Lincot, R. Ortega, and J. Vedel, in Proceedings of the 6th International Photovoltaic Science and Engineering Conference, New Delhi, India (Oxford and IBH, New Delhi, 1992), p. 1005.
9. W. E. Devaney, W. S. Chen, J. M. Stewart, and R. A. Mickelsen, IEEE Trans. Electron Devices ED-37, 428 (1990).
10. B. Grzeta-Plenkovic, A. Popovic, B. Celustka, and B. Santic, J. Appl. Crystallogr. 13, 311 (1980).
11. M. Marudachalam, H. Hichri, R. Klenk, R. W. Birkmire, W. N. Shafarman, and J. M. Schultz, Appl. Phys. Lett. 67, 3978 (1995).
12. M. Roy, S. Damaskinos, and J. E. Phillips, in Proceedings of the 20th IEEE Photovoltaic Specialists Conference, Las Vegas, NV (Institute of Electrical and Electronics Engineers, New York, 1988), p. 1618.
13. W. N. Shafarman and J. E. Phillips, in Proceedings of the 22nd IEEE Photovoltaic Specialists Conference, Las Vegas, NV (Institute of Electrical and Electronics Engineers, New York, 1991), p. 934.
14. D. Schmid, M. Ruckh, F. Grunwald, and H. W. Schock, J. Appl. Phys. 73, 2902 (1993).