Investigation of defect properties in Cu(In,Ga)Se2 solar cells by deep-level transient spectroscopy

Solid-State Electronics

Volumn 48, Issue 9, 2004, Pages 1579-1586

  Kerr, L L ^a   Li, Sheng S ^b   Johnston, S W ^c   Anderson, T J ^a   Crisalle, O D ^a   Kim, W K ^a   Abushama, J ^c   Noufi, R N ^c  

^a University of Florida   (United States)

^b Department of Electrical Engineering ^*  (United States)

^c NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COPPER COMPOUNDS; ELECTRON ENERGY LEVELS; PHOTOVOLTAIC CELLS; PHOTOVOLTAIC EFFECTS; POLYCRYSTALLINE MATERIALS; STOICHIOMETRY; THIN FILMS;

CHALCOPYRITE MATERIALS; OPEN-CIRCUIT VOLTAGE; PHOTOVOLTAIC DEVICES; TRANSIENT SPECTROSCOPY;

SOLAR CELLS;

EID: 2942637819     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.03.005     Document Type: Conference Paper

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