Minority-carrier lifetime and efficiency of Cu(In,Ga)Se2 solar cells

Applied Physics Letters

Volumn 73, Issue 9, 1998, Pages 1224-1226

  Ohnesorge, B ^a   Weigand, R ^a   Bacher, G ^a   Forchel, A ^a   Riedl, W ^b   Karg, F H ^b  

^a UNIVERSITY OF WÜRZBURG   (Germany)

^b SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005798238     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122134     Document Type: Article

References (20)

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18. In this context we recall our earlier results which have demonstrated a correlation between the grain size of the polycrystalline CIS material and the room-temperature lifetime indicating the influence of nonradiative recombination at the ground boundaries [see Ref. 6, G. Bacher, W. Braun, B. Ohnesorge, A. Forchel, F. H. Karg, and W. Riedl, Cryst. Res. Technol. 31, 737 (1996)].
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