Oxygenation and air-annealing effects on the electronic properties of Cu(In,Ga)Se2 films and devices

Journal of Applied Physics

Volumn 86, Issue 1, 1999, Pages 497-505

  Rau, U ^a   Braunger, D ^a   Herberholz, R ^a   Schock, H W ^a   Guillemoles, J F ^b   Kronik, L ^c   Cahen, David ^c  

^a UNIVERSITY OF STUTTGART   (Germany)

^b PSL RESEARCH UNIVERSITY   (France)

^c WEIZMANN INSTITUTE OF SCIENCE   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COPPER COMPOUNDS; DEPOSITION; ELECTRIC ADMITTANCE; GRAIN BOUNDARIES; HETEROJUNCTIONS; PASSIVATION; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; THIN FILM DEVICES; ULTRAVIOLET SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

ADMITTANCE SPECTROSCOPY; AIR ANNEALING; HETEROJUNCTION SOLAR CELLS; OXYGENATION; THIN FILM SOLAR CELLS;

SOLAR CELLS;

EID: 0032614581     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370758     Document Type: Article

References (53)

1. K. Zweibel, Prog. Photovoltaics 3, 279 (1995).
2. R. A. Mickelsen, W. S. Chen, H. R. Hsiao, and V. Lowe, IEEE Trans. Electron Devices ED-31, 542 (1984).
3. K. Mitchell, C. Eberspacher, J. Ermer, and D. Pier, Proceedings of the 20th IEEE Photovoltaic Specialists Conference (IEEE, New York, 1988), p. 1384.
4. R. J. Matson, R. Noufi, R. K. Ahrenkiel, R. C. Powell, and D. Cahen, Sol. Cells 16, 495 (1986).
5. D. Cahen and R. Noufi, Appl. Phys. Lett. 54, 558 (1989); Sol. Cells 30, 53 (1991).
6. D. Cahen and R. Noufi, Appl. Phys. Lett. 54, 558 (1989); Sol. Cells 30, 53 (1991).
7. R. W. Birkmire, L. C. DiNetta, P. G. Lasswell, J. D. Meakin, and J. E. Phillips, Sol. Cells 16, 419 (1986).
8. R. R. Potter, C. Eberspacher, and L. B. Fabick, Proceedings of the 18th IEEE Photovoltaic Specialists Conference (IEEE, New York, 1985), p. 1659.
9. J. R. Tuttle, J. S. Ward, T. A. Berens, M. A. Contreras, K. R. Ramanathan, A. L. Tennant, J. Keane, E. D. Cole, K. Emery, and R. Noufi, Mater. Res. Soc. Symp. Proc. 426, 143 (1996); J. Hedström, H. Olsen, M. Bodegard, A. Kylner, L. Stolt, D. Hariskos, M. Ruckh, and H. W. Schock, Proceedings of the 23rd IEEE Photovoltaic Specialists Conference (IEEE, New York, 1993), p . 364.
10. J. R. Tuttle, J. S. Ward, T. A. Berens, M. A. Contreras, K. R. Ramanathan, A. L. Tennant, J. Keane, E. D. Cole, K. Emery, and R. Noufi, Mater. Res. Soc. Symp. Proc. 426, 143 (1996); J. Hedström, H. Olsen, M. Bodegard, A. Kylner, L. Stolt, D. Hariskos, M. Ruckh, and H. W. Schock, Proceedings of the 23rd IEEE Photovoltaic Specialists Conference (IEEE, New York, 1993), p . 364.
11. L. Kronik, D. Cahen, and H. W. Schock, Adv. Mater. 10, 31 (1998).
12. M. Schmitt, U. Rau, and J. Parisi, Proceedings of the 13th European Photovoltaic Solar Energy Conference (Stephens, Bedford, 1995), p. 1969.
13. T. Walter, R. Herberholz, C. Müller, and H. W. Schock, J. Appl. Phys. 80, 4411 (1996).
14. R. Herberholz, M. Igalson, and H. W. Schock, J. Appl. Phys. 83, 318 (1998).
15. R. Herberholz, Inst. Phys. Conf. Ser. 152E, 733 (1998).
16. R. A. Sasala and J. R. Sites, Sol. Cells 30, 101 (1991).
17. P. H. Mauk, H. Tavakolian, and J. R. Sites, IEEE Trans. Electron Devices ED-37, 422 (1990).
18. D. Schmid, M. Ruckh, F. Grunwald, and H. W. Schock, J. Appl. Phys. 73, 2902 (1993); D. Schmidt, M. Ruckh, H. W. Schock, Sol. Energy Mater. Sol. Cells 41/42, 281 (1995).
19. D. Schmid, M. Ruckh, F. Grunwald, and H. W. Schock, J. Appl. Phys. 73, 2902 (1993); D. Schmidt, M. Ruckh, H. W. Schock, Sol. Energy Mater. Sol. Cells 41/42, 281 (1995).
20. R. Herberholz, H. W. Schock, U. Rau, J. H. Werner, T. Haalboom, T. Gödecke, F. Ernst, C. Beilharz, K.W. Benz, and D. Cahen, Proceedings of the 26th IEEE Photovoltaic Specialists Conference (IEEE, Piscataway, 1998), p. 323.
21. R. Herberholz, U. Rau, H. W. Schock, T. Haalboom, T. Gödecke, F. Ernst, C. Beilharz, K. W. Benz, and D. Cahen, Eur. Phys.: J. AP 6 (in press).
22. M. Topic, F. Smole, and J. Furlan, Sol. Energy Mater. Sol. Cells 49, 311 (1997).
23. A. Niemeegers, M. Burgelman, R. Herberholz, U. Rau, D. Hariskos, and H. W Schock, Prog. Photovoltaics 6, 407 (1998).
24. C. R. Crowell and G. I. Roberts, J. Appl. Phys. 40, 3726 (1969).
25. M. A. Green, F. D. King, and J. Shewchun, Solid-State Electron. 17, 551 (1974).
26. The charge neutrality level is defined as the energy distance between the Fermi level and the valence band edge which would lead to a neutral surface or interface; see, e.g., E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts, 2nd ed. (Clarendon, Oxford, 1988), p. 15.
27. J. Y. W. Seto, J. Appl. Phys. 46, 5247 (1975); T. Kamins, Polycrystalline Silicon for Integrated Circuit Applications (Kluwer, Boston, 1998), p. 171.
28. J. Y. W. Seto, J. Appl. Phys. 46, 5247 (1975); T. Kamins, Polycrystalline Silicon for Integrated Circuit Applications (Kluwer, Boston, 1998), p. 171.
29. U. Rau, D. Braunger, and H. W. Schock, in Polycrystalline Semiconductors V - Bulk Materials, Thin Films, and Devices, edited by J. H. Werner, H. P. Strunk, H. W. Schock, "Solid State Phenomena" (Scitech, Uettikon am See, Switzerland, 1999), p. 409.
30. L. Stolt, M. Bodegard, J. Hedström, J. Kessler, M. Ruckh, K. O. Velthaus, and H. W. Schock, Proceedings of the 11th European Photovoltaic Solar Energy Conference (Stephens, Bedford, UK, 1992), p. 120.
31. D. Schmid, M. Ruckh, and H. W. Schock, Appl. Surf. Sci. 103, 409 (1996).
32. H. Lüth, Surfaces and Interfaces of Solids, 2nd ed. (Springer-Verlag, Berlin, 1993).
33. L. L. Kazmerski, O. Jamjoum, J. F. Wagner, P. J. Ireland, and K. J. Bachmann, J. Vac. Sci. Technol. A 1, 668 (1983); L. L. Kazmerski, P. J. Ireland, O. Jamjoum, S. K. Deb, R. A. Mickelsen, and W. Chen, J. Vac. Sci. Technol. 19, 467 (1981).
34. L. L. Kazmerski, O. Jamjoum, J. F. Wagner, P. J. Ireland, and K. J. Bachmann, J. Vac. Sci. Technol. A 1, 668 (1983); L. L. Kazmerski, P. J. Ireland, O. Jamjoum, S. K. Deb, R. A. Mickelsen, and W. Chen, J. Vac. Sci. Technol. 19, 467 (1981).
35. G. A. Medvedkin, M. Y. Yakushev, A. E. Hill, R. D. Pilkington, and R. D. Tomlinson, Cryst. Res. Technol. 31, 209 (1996).
36. M. Igalson and H. W. Schock, J. Appl. Phys. 80, 5765 (1996).
37. D. Vincent, G. Bois, and P. Pinard, J. Appl. Phys. 46, 5173 (1975).
38. M. Köntges, Diploma thesis, University of Oldenburg, 1998 (unpublished).
39. L. Kronik et al., Appl. Phys. Lett. 67, 1405 (1995).
40. L. Stolt, J. Hedström, J. Kessler, M. Ruckh, K. O. Velthaus, and H. W. Schock, Appl. Phys. Lett. 62, 597 (1993).
41. K. Ramanathan, H. Wiesner, S. Asher, D. Niles, R. N. Bhattacharya, J. Keane, M. A. Contreras, and R. Noufi, Proceedings of the 2nd World Conference on Photovoltaic Energy Conversion, edited by J. Schmid, H. A. Ossenbrink, P. Helm, H. Ehmann, and E. D. Dunlop (E. C. Joint Res. Centre, Luxembourg, 1998), p. 477.
42. T. Wada, S. Hayashi, Y. Hashimoto, S. Nishiwaki, T. Sato, and M. Nishitina, in Proceedings of the 2nd World Conference on Photovoltaic Energy Conversion, edited by J. Schmid, H. A. Ossenbrink, P. Helm, H. Ehmann, and E. D. Dunlop (E. C. Joint Res. Centre, Luxembourg, 1998), p. 403.
43. L. Kronik, B. Mishori, E. Fefer, Y. Shapira, and W. Riedl, Sol. Energy Mater. Sol. Cells 51, 21 (1998).
44. M. Ruckh, D. Schmid, M. Kaiser, R. Schäffler, T. Walter, H. W. Schock, Proceedings of the 1st World Conference on Photovoltaic Energy Conversion (IEEE, New York, 1994), p. 156.
45. V. Probst, J. Rimmasch, W. Riedl, W. Stetter, J. Holz, H. Harms, F. Karg, and H. W. Schock, Proceedings of the 1st World Conference on Photovoltaic Energy Conversion (IEEE, New York, 1994), p. 144.
46. U. Rau, M. Schmitt, F. Engelhardt, O. Seifert, J. Parisi, W. Riedl, J. Rimmasch, and F. Karg, Solid State Commun. 107, 59 (1998).
47. D. Cahen, P. J. Ireland, L. L. Kazmerski, and F. A. Thiel, J. Appl. Phys. 57, 4761 (1985).
48. See, e.g., J. McMurry, Organic Chemistry, 2nd ed. (Brooks&Cole, Belmont, 1988), p. 41.
49. K. Gartsman, L. Chernyak, V. Lyakhvitskaya, D. Cahen, V. Didik, V. Koslovsky, R. Malkovich, E. Skoryatina, and V. Usacheva, J. Appl. Phys. 82, 4282 (1997); D. Cahen and L. Chernyak, Adv. Mater. 9, 861 (1997).
50. K. Gartsman, L. Chernyak, V. Lyakhvitskaya, D. Cahen, V. Didik, V. Koslovsky, R. Malkovich, E. Skoryatina, and V. Usacheva, J. Appl. Phys. 82, 4282 (1997); D. Cahen and L. Chernyak, Adv. Mater. 9, 861 (1997).
51. S. B. Zhang, S.-H. Wei, and A. Zunger, Phys. Rev. Lett. 78, 4059 (1997).
52. A. Klein, C. Pettenkofer, and W. Jaegermann, J. Appl. Phys. 80, 5039 (1996).
53. D. W. Niles, M. Al-Jassim, and K. Ramanathan, J. Vac. Sci. Technol. A 17, 291 (1999).