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Applied Physics Letters

Volumn 85, Issue 8, 2004, Pages 1404-1406

InAs/lnP quantum dots emitting in the 1.55 μm wavelength region by inserting submonolayer GaP interlayers

(5) Gong, Q a Notzel R a Van Veldhoven, P J a Eijkemans, T J a Wolter, J H a

a EINDHOVEN UNIVERSITY OF TECHNOLOGY (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; CHEMICAL BEAM EPITAXY; DEPOSITION; MORPHOLOGY; OPTOELECTRONIC DEVICES; PARAMETER ESTIMATION; PHOTOLUMINESCENCE; QUENCHING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM;

ARSENIC FLUX; BLUESHIFTS; BUFFER CHAMBERS; SUBMONOLAYERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 4544379098 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1785859 Document Type: Article

Times cited : (26)

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