Observation of exciton transition in 1.3-1.55 μm band from single InAs/InP quantum dots in mesa structure

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 3 A, 2004, Pages

  Takemoto, Kazuya ^a   Sakuma, Yoshiki ^b   Hirose, Shinichi ^a   Usuki, Tatsuya ^a   Yokoyama, Naoki ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

C band; Double cap growth; InAs InP; MOCVD; O band; Single quantum dots

Indexed keywords

ANNEALING; CRYOSTATS; ETCHING; EXCITONS; GROUND STATE; MATERIALS SCIENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; QUANTUM THEORY; SCANNING ELECTRON MICROSCOPY; SELF ASSEMBLY; SEMICONDUCTOR QUANTUM DOTS;

C-BAND; DOUBLE-CAP GROWTH; INAS/INP; O-BAND; SINGLE QUANTUM DOTS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 2442516498     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.43.l349     Document Type: Article

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