Comparison between post-irradiation annealing and post-high electric field stress annealing of n-channel power VDMOSFETs

Applied Surface Science

Volumn 220, Issue 1-4, 2003, Pages 181-185

  Ristić, Goran S ^a,c   Pejović, Momčilo M ^b   Jakšić, Aleksandar B ^b  

^a UNIVERSITY OF NI   (Serbia)

^b Natl Microelectron Research Centre   (Serbia)

^c SUNNYBROOK RESEARCH INSTITUTE   (Canada)

Author keywords

Annealing; Electric field stress; Interface traps; Irradiation; MOS transistor; Oxide traps

Indexed keywords

ANNEALING; DEFECTS; ELECTRIC FIELDS; IRRADIATION;

INTERFACE TRAPS;

MOSFET DEVICES;

EID: 0142248255     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00818-3     Document Type: Article

References (20)

1. T.P. Ma, P.V. Dressendorfer, Ionizing Radiation Effects in MOS Devices and Circuits, Wiley, New York, 1989.
2. Ristić G.S., Pejović M.M., Jakšić A.B. J. Appl. Phys. 83:1998;2994-3000.
3. Ristić G.S., Pejović M.M., Jakšić A.B. J. Appl. Phys. 87:2000;3468-3477.
4. Schwank J.R., Fleetwood D.M., Shaneyfelt M.R., Winokur P.S. IEEE Electron. Dev. Lett. 13:1992;203-205.
5. Schwank J.R., Fleetwood D.M., Shaneyfelt M.R., Winokur P.S., Axness C.L., Riewe L.C. IEEE Trans. Nucl. Sci. 39:1992;1953-1963.
6. McWhorter P.J., Winokur P.S. Appl. Phys. Lett. 48:1986;133-135.
7. Elliot A.B.M. Solid State Electron. 19:1976;241-247.
8. Groeseneken G., Maes H.E., Beltran N., Keersmaecker R.F.D. IEEE Trans. Electron. Dev. 31:1984;42-53.
9. Jakšić A., Igić P. Electron. Lett. 32:1996;2183-2184.
10. Fleetwood D.M. IEEE Trans. Nucl. Sci. 39:1992;269-271.
11. Fleetwood D.M., Winokur P.S., Reber R.A. Jr., Meisenheimer T.L., Schwank J.R., Shaneyfelt M.R., Riewe L.C. J. Appl. Phys. 73:1993;5058-5074.
12. Pejović M., Ristić G., Jakšić A. Appl. Surf. Sci. 108:1997;141-148.
13. Pejović M., Ristić G. Solid State Electron. 41:1997;715-720.
14. Jakšić A., Pejović M., Ristić G., Raković S. IEEE Trans. Nucl. Sci. 45:1998;1365-1371.
15. Fleetwood D.M., Warren W.L., Schwank J.R., Winokur P.S., Shaneyfelt M.R., Riewe L.C. IEEE Trans. Nucl. Sci. 42:1995;1698-1707.
16. Pejović M., Jakšić A., Ristić G. J. Non-Cryst. Solids. 240:1998;182-192.
17. Nashioka Y., da Silva E.F. Jr., Ma T.P. Appl. Phys. Lett. 52:1998;720-722.
18. Fleetwood D.M., Saks N.S. J. Appl. Phys. 79:1996;1583-1594.
19. Lelis A.J., Oldham T.R. IEEE Trans. Nucl. Sci. 41:1994;1835-1843.
20. Freitag R.K., Brown D.B., Dozier C.M. IEEE Trans. Nucl. Sci. 40:1993;1316-1322.