Equivalence between interface traps in SiO2/Si generated by radiation damage and hot-electron injection

Applied Physics Letters

Volumn 52, Issue 9, 1988, Pages 720-722

  Nishioka, Yasushiro ^a   Da Silva Jr , Eronides F ^a   Ma, T P ^a  

^a YALE UNIVERSITY   (United States)

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EID: 0142240595     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.99358     Document Type: Article

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