A study on the reactive ion etching of SiC single crystals using inductively coupled plasma of SF6-based gas mixtures

Metals and Materials International

Volumn 10, Issue 1, 2004, Pages 103-106

  Ahn, S C ^a   Han, S Y ^b   Lee, J L ^b   Moon, J H ^a   Lee, B T ^a  

^a Chonnam National University   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

ICP; RIE; SF6; SiC

Indexed keywords

GAS MIXTURES; GASES; PHOTORESISTS; REACTIVE ION ETCHING; SCHOTTKY BARRIER DIODES; SILICA; SILICON; SILICON CARBIDE; SINGLE CRYSTALS; SULFUR HEXAFLUORIDE;

BIAS POWER; ETCH RATES; I-V MEASUREMENTS; INDUCTIVELY COUPLED-PLASMA REACTIVE ION ETCHING; OPTIMUM CONDITIONS; SIC SINGLE CRYSTALS; SMOOTH SURFACE; SURFACE CHARACTERIZATION;

INDUCTIVELY COUPLED PLASMA;

EID: 11144349518     PISSN: 15989623     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF03027370     Document Type: Article

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