Direct measurement of electrical potentials in GaInP2 solar cells

Applied Physics Letters

Volumn 81, Issue 14, 2002, Pages 2569-2571

  Jiang, Chun Sheng ^a   Moutinho, H R ^a   Geisz, J F ^a   Friedman, D J ^a   Al Jassim, M M ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BACK SURFACE FIELDS; BAND OFFSETS; BASE LAYERS; CROSS SECTION; DIRECT MEASUREMENT; ELECTRICAL POTENTIAL; ELECTROSTATIC FORCE MICROSCOPY; GAAS SUBSTRATES; GAINP; LIGHT IRRADIATIONS; P-N JUNCTION; PHOTOVOLTAIC DEVICES; SPATIALLY RESOLVED;

ELECTRIC FORCE MICROSCOPY; ELECTROSTATIC DEVICES; ELECTROSTATIC FORCE; HETEROJUNCTION BIPOLAR TRANSISTORS; OPEN CIRCUIT VOLTAGE; SEMICONDUCTOR JUNCTIONS;

PHOTOVOLTAIC EFFECTS;

EID: 79956015671     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1509114     Document Type: Article

References (18)

1. For a review, see, R. H. Bube, Photovoltaic Materials (Imperial College Press, London, 1998).
2. For examples, see, P. A. Rosenthal, E. T. Yu, R. L. Pierson, and P. J. Zampardi, J. Appl. Phys. 87, 1937 (2000); jap JAPIAU 0021-8979
3. Q. Xu and J. W. P. Hsu, Phys. Rev. Lett. 82, 612 (1999); prl PRLTAO 0031-9007
4. C. Ballif, H. R. Moutinho, and M. M. Al-Jassim, J. Appl. Phys. 89, 1418 (2001). jap JAPIAU 0021-8979
5. K. A. Bertness, S. R. Kurtz, D. J. Friedman, A. E. Kibbler, C. Kramer, and J. M. Olson, Appl. Phys. Lett. 65, 989 (1994). apl APPLAB 0003-6951
6. D. P. Bour, J. R. Shealy, G. W. Wicks, and W. J. Schaff, Appl. Phys. Lett. 50, 615 (1987). apl APPLAB 0003-6951
7. S.-H. Wei and A. Zunger, Appl. Phys. Lett. 72, 2011 (1998). apl APPLAB 0003-6951
8. S. R. Kurtz, P. Faine, and J. M. Olson, J. Appl. Phys. 68, 1890 (1990). jap JAPIAU 0021-8979
9. A. Gomyo, T. Suzuki, and S. Iijima, Phys. Rev. Lett. 60, 2645 (1988). prl PRLTAO 0031-9007
10. J. Chen, J. R. Sites, I. L. Spain, M. J. Hafich, and G. Y. Robinson, Appl. Phys. Lett. 58, 744 (1991). apl APPLAB 0003-6951
11. S. Froyen, A. Zunger, and A. Mascarenhas, Appl. Phys. Lett. 68, 2852 (1996). apl APPLAB 0003-6951
12. J. J. O'Shea, C. M. Reaves, S. P. Debaars, M. A. Chin, and V. Narayanamurti, Appl. Phys. Lett. 69, 3022 (1996). apl APPLAB 0003-6951
13. M. E. Levinshtein and S. L. Rumyantsev, in Handbook Series on Semiconductor Parameters (World Scientific, River Edge, NJ, 1996), Vol. 1, p. 77.
14. M. A. Haase, M. J. Hafich, and G. Y. Robinson, Appl. Phys. Lett. 58, 616 (1991). apl APPLAB 0003-6951
15. T. W. Lee, P. A. Houston, R. Kumar, X. F. Yang, G. Hill, M. Hopkinson, and P. A. Claxton, Appl. Phys. Lett. 60, 474 (1992). apl APPLAB 0003-6951
16. H. O. Jacobs, H. F. Knapp, S. Muller, and A. Stemmer, Ultramicroscopy 69, 19 (1997). ult ULTRD6 0304-3991
17. K. J. Choi and J.-L. Lee, Appl. Phys. Lett. 74, 1108 (1999). apl APPLAB 0003-6951
18. For example, see, Y. Marfaing, in Handbook on Semiconductors Vol. 2: Optical Properties of Semiconductors (Elsevier Science, Amsterdam, 1994), Chap. 12.