Transistor-based evaluation of conduction-band offset in GaInP/GaAs heterojunction

Applied Physics Letters

Volumn 69, Issue 9, 1996, Pages 1288-1290

  Faleh, M S ^a   Tasselli, J ^a   Bailbe, J P ^a   Marty, A ^a  

^a LAAS CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION; ELECTRIC VARIABLES MEASUREMENT; MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING;

CHARGE CONTROL METHOD; COLLECTOR CURRENTS; CONDUCTION BAND DISCONTINUITY; FERMI STATISTICS; GALLIUM INDIUM PHOSPHIDE; POTENTIAL BARRIER EFFECT;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030215441     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117394     Document Type: Review

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