-
1
-
-
0033123788
-
Short-wavelength (0.7μm < λ < 0.78μm) high-power InGaAsP-active diode lasers
-
MAWST, L.J., RUSLI, S., AL-MUHANNA, A., and WADE, J.K.: 'Short-wavelength (0.7μm < λ < 0.78μm) high-power InGaAsP-active diode lasers', IEEE J. Sel. Top. Quantum Electron., 1999, 5, pp. 785-791
-
(1999)
IEEE J. Sel. Top. Quantum Electron.
, vol.5
, pp. 785-791
-
-
Mawst, L.J.1
Rusli, S.2
Al-Muhanna, A.3
Wade, J.K.4
-
2
-
-
0032652820
-
Diode laser with Al-free quantum wells embedded in LOC AlGaAs waveguides between 715nm and 840nm
-
ERBERT, G., BUGGE, F., KNAUER, A., MAEGE, J., OSTER, A., SEBASTIAN, J., STASKE, R., THIES, A., WENZEL, H., WEYERS, M., and TRÄNKLE, G.: 'Diode laser with Al-free quantum wells embedded in LOC AlGaAs waveguides between 715nm and 840nm', Proc. SPIE, 1999, 3628, pp. 19-28
-
(1999)
Proc. SPIE
, vol.3628
, pp. 19-28
-
-
Erbert, G.1
Bugge, F.2
Knauer, A.3
Maege, J.4
Oster, A.5
Sebastian, J.6
Staske, R.7
Thies, A.8
Wenzel, H.9
Weyers, M.10
Tränkle, G.11
-
3
-
-
0001565701
-
Steady state model for facet heating leading to thermal runaway in semiconductor lasers
-
SCHATZ, R., and BETHEA, C.G.: 'Steady state model for facet heating leading to thermal runaway in semiconductor lasers', J. Appl. Phys., 1994, 76, pp. 2509-2521
-
(1994)
J. Appl. Phys.
, vol.76
, pp. 2509-2521
-
-
Schatz, R.1
Bethea, C.G.2
-
4
-
-
0029711097
-
High power separate confinement heterostructure AlGaAs/GaAs laser diodes with broadened waveguide
-
GARBUZOV, D.Z., ABELES, J.H., MORRIS, N.A., GARDNER, P.D., TRIANO, A.R., HARVEY, M.G., GILBERT, D.B., and CONNOLLY, J.C.: 'High power separate confinement heterostructure AlGaAs/GaAs laser diodes with broadened waveguide', Proc. SPIE, 1996, 2682, p. 20-26
-
(1996)
Proc. SPIE
, vol.2682
, pp. 20-26
-
-
Garbuzov, D.Z.1
Abeles, J.H.2
Morris, N.A.3
Gardner, P.D.4
Triano, A.R.5
Harvey, M.G.6
Gilbert, D.B.7
Connolly, J.C.8
-
5
-
-
0026169860
-
High-power operation of broad area laser diodes with GaAs and AlGaAs single quantum wells for Nd:YAG laser pumping
-
SHIGIHARA, K., NAGAI, Y., KARAKIDA, S., TAKAMI, A., KOBUKO, Y., MATSUBARA, H., and KAKIMOTO, S.: 'High-power operation of broad area laser diodes with GaAs and AlGaAs single quantum wells for Nd:YAG laser pumping', IEEE J. Quantum Electron., 1991, 27, pp. 1537-1543
-
(1991)
IEEE J. Quantum Electron.
, vol.27
, pp. 1537-1543
-
-
Shigihara, K.1
Nagai, Y.2
Karakida, S.3
Takami, A.4
Kobuko, Y.5
Matsubara, H.6
Kakimoto, S.7
-
6
-
-
0032477119
-
The influence of trimethylindium impurities on the performance of InAlGaAs single quantum well lasers
-
ROBERTS, J.S., DAVID, J.P.R., SMITH, L., and TIHANYI, P.L.: 'The influence of trimethylindium impurities on the performance of InAlGaAs single quantum well lasers', J. Cryst. Growth, 1998, 195, pp. 668-675
-
(1998)
, J. Cryst. Growth
, vol.195
, pp. 668-675
-
-
Roberts, J.S.1
David, J.P.R.2
Smith, L.3
Tihanyi, P.L.4
-
7
-
-
0031275384
-
High-power InAlGaAs-GaAs laser diode emitting near 731nm
-
EMANUEL, M.A., SKIDMORE, J.A., JANSEN, M., and NABIEV, R.: 'High-power InAlGaAs-GaAs laser diode emitting near 731nm', IEEE Photonics Technol. Lett., 1997, 9, pp. 1451-1453
-
(1997)
IEEE Photonics Technol. Lett.
, vol.9
, pp. 1451-1453
-
-
Emanuel, M.A.1
Skidmore, J.A.2
Jansen, M.3
Nabiev, R.4
-
8
-
-
0032606190
-
High-power, reliable operation of 730nm AlGaAs laser diodes
-
SINGH, R., BULL, D., DABKOWSKI, F.P., CLAUSEN, E., and CHIN, A.K.: 'High-power, reliable operation of 730nm AlGaAs laser diodes', Appl. Phys. Lett., 1999, 75, pp. 2002-2004
-
(1999)
Appl. Phys. Lett.
, vol.75
, pp. 2002-2004
-
-
Singh, R.1
Bull, D.2
Dabkowski, F.P.3
Clausen, E.4
Chin, A.K.5
-
9
-
-
0032614582
-
Design considerations and analytical approximations for high-continuous wave power, broad-waveguide, diode lasers
-
BOTEZ, D.: 'Design considerations and analytical approximations for high-continuous wave power, broad-waveguide, diode lasers', Appl. Phys. Lett., 1999, 74, pp. 3102-3104
-
(1999)
Appl. Phys. Lett.
, vol.74
, pp. 3102-3104
-
-
Botez, D.1
-
10
-
-
0032072215
-
8.8W CW power from broad-waveguide Al-free active-region (λ = 805nm) diode lasers
-
WADE, J.K., MAWST, L.J., BOTEZ, D., and MORRIS, J.A.: '8.8W CW power from broad-waveguide Al-free active-region (λ = 805nm) diode lasers', Electron. Lett., 1998, 34, pp. 1100-1101
-
(1998)
Electron. Lett.
, vol.34
, pp. 1100-1101
-
-
Wade, J.K.1
Mawst, L.J.2
Botez, D.3
Morris, J.A.4
-
11
-
-
0000813666
-
Transmission electron microscope and transmission electron diffraction observations of alloy clustering in liquid- phase epitaxial (001) GaInAsP layers
-
NORMAN, A.G., and BOKKER, G.R.: 'Transmission electron microscope and transmission electron diffraction observations of alloy clustering in liquid- phase epitaxial (001) GaInAsP layers', J. Appl. Phys., 1985, 57, pp. 4715-4720
-
(1985)
J. Appl. Phys.
, vol.57
, pp. 4715-4720
-
-
Norman, A.G.1
Bokker, G.R.2
-
12
-
-
0032498487
-
730nm-emitting Al-free active-region diode lasers with compressively strained InGaAsP quantum wells
-
AL-MUHANNA, A., WADE, J.K., MAWST, L.J., and FU, R.: '730nm-emitting Al-free active-region diode lasers with compressively strained InGaAsP quantum wells', Appl. Phys. Lett., 1998, 72, pp. 641-643
-
(1998)
Appl. Phys. Lett.
, vol.72
, pp. 641-643
-
-
Al-Muhanna, A.1
Wade, J.K.2
Mawst, L.J.3
Fu, R.4
-
13
-
-
0032312122
-
y-AlGaAs quantum well diode lasers emitting between 715nm and 790nm
-
Paper TUA4
-
y-AlGaAs quantum well diode lasers emitting between 715nm and 790nm'. IEEE Int. Semiconductor Laser Conf., 1998, Paper TUA4
-
(1998)
IEEE Int. Semiconductor Laser Conf.
-
-
Erbert, G.1
Bugge, F.2
Knauer, A.3
Sebastian, J.4
Thies, A.5
Wenzel, H.6
Weyers, M.7
Tränkle, G.8
-
14
-
-
0030709741
-
100W CW Al-free 808nm linear bar arrays
-
DAIMINGER, F., HEINEMAN., NAPPI, J., TOIVONEN, M., and ASONEN, H.: '100W CW Al-free 808nm linear bar arrays'. OSA Lasers Electro-Optics Conf. Tech. Dig., 1997, Vol. 11, pp. 482
-
(1997)
OSA Lasers Electro-Optics Conf. Tech. Dig.
, vol.11
, pp. 482
-
-
Daiminger, F.1
Heineman2
Nappi, J.3
Toivonen, M.4
Asonen, H.5
|