Influence of ordering on the polarization characteristics of GaInP vertical-cavity surface-emitting lasers

IEEE Photonics Technology Letters

Volumn 9, Issue 2, 1997, Pages 143-145

  Chen, Y H ^b   Wilkinson, C I ^b   Woodhead, J ^b   David, J P R ^a,b   Button, C C ^b   Robson, P N ^a,b  

^a IEEE

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

GaInP; Ordering; Polarization; Semiconductor lasers; Strain; Substrate orientation; VCSEL

Indexed keywords

ANISOTROPY; BAND STRUCTURE; CRYSTAL ORIENTATION; LIGHT POLARIZATION; METALLORGANIC VAPOR PHASE EPITAXY; MIRRORS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS;

DISTRIBUTED BRAGG REFLECTOR (DBR); QUANTUM WELL STRAIN; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0031075762     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.553066     Document Type: Article

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