Comparison of plasma chemistries for inductively coupled plasma etching of InGaAIP alloys

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 3, 1998, Pages 1497-1501

  Hong, J ^a   Lee, J W ^a   Abernathy, C R ^a   Lambers, E S ^a   Pearton, S J ^a   Shul, R J ^b   Hobson, W S ^c  

^a University of Florida   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AR PLASMAS; ETCH RATES; ICP SOURCE; INGAAIP; NEAR SURFACE REGIONS; PLASMA CHEMISTRIES; PRODUCT DESORPTION; ROOT MEAN SQUARE ROUGHNESS; SMOOTH SURFACE;

ARGON; ATOMIC FORCE MICROSCOPY; CERIUM ALLOYS; DESORPTION; INDUCTIVELY COUPLED PLASMA; PHOSPHORUS; PHOTORESISTS; PLASMA ETCHING; STOICHIOMETRY; SURFACES;

ELECTRIC DISCHARGES;

EID: 0005319948     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581176     Document Type: Article

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