Comparison of dry etching of AlGaAs and InGaP in a planar inductively coupled BCl 3 plasma

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 6, 2003, Pages 2487-2491

  Baek, I K ^a   Lim, W T ^a   Lee, J W ^a   Jeon, M H ^a   Cho, G S ^a   Pearton, S J ^b  

^a Inje University   (South Korea)

^b J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC MASS FLOW CONTROLLERS; OPTICAL EMISSION SPECTROSCOPY (OES);

ATOMIC FORCE MICROSCOPY; EMISSION SPECTROSCOPY; ETCHING; INDUCTIVELY COUPLED PLASMA; PASSIVATION; PHOTORESISTS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0942278369     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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